STE100N20 n - channel enhancement mode power mos transistor in isotop package n high current power module n avalanche rugged technology (see sth33n20fi for rating) n very large soa - large peak power capability n easy to mount n same current capability for the two source terminals n extremely low r th junction to case n very low drain to case capacitance n very low internal parasitic inductance (typically < 5 nh) n isolated package ul recognized (file no e81743) industrial applications: n smps & ups n motor control n welding equipment n output stage for pwm, ultrasonic circuits july 1993 type v dss r ds(on) i d STE100N20 200 v < 0.021 w 100 a absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 200 v v dg r drain-gate voltage (r gs =20k w ) 200 v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c 100 a i d drain current (continuous) at t c =100 o c65a i dm ( ? ) drain current (pulsed) 400 a p tot total dissipation at t c =25 o c 450 w derating factor 3.6 w/ o c t stg storage temperature -55 to 150 o c t j max. operating junction temperature 150 o c v iso insulation withstand voltage (ac-rms) 2500 v ( ? ) pulse width limited by safe operating area 3 2 1 4 internal schematic diagram isotop 1/8
thermal data r thj-case r thc-h thermal resistance junction-case max thermal resistance case-heatsink with conductive grease applied max 0.27 0.05 o c/w o c/w electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =1ma v gs = 0 v 200 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds = max rating x 0.8 t c =125 o c 400 2 m a ma i gss gate-body leakage current (v ds =0) v gs = 20 v 400 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =1ma 2 4 v r ds(on) static drain-source on resistance v gs =10v i d = 60 a 0.021 w dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds =15v i d =60a 38 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs =0v 12 3200 1200 nf pf pf switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =100v i d =50a r g =4.7 w v gs =10v (see test circuit, figure 1) 75 140 ns ns (di/dt) on turn-on current slope v dd = 160 v i d = 100 a r g =4.7 w v gs =10v (see test circuit, figure 3) 480 a/ m s q g total gate charge v dd = 160 v i d =100a v gs =10v 505 nc STE100N20 2/8
electrical characteristics (continued) switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 160 v i d =100a r g =4.7 w v gs =10v (see test circuit, figure 3) 230 155 370 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 100 400 a a v sd ( * ) forward on voltage i sd =100a v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 100 a di/dt = 100 a/ m s v dd =30v t j =150 o c (see test circuit, figure 3) 580 3.5 12 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area thermal impedance STE100N20 3/8
derating curve transfer characteristics static drain-source on resistance output characteristics transconductance gate charge vs gate-source voltage STE100N20 4/8
capacitance variations normalized gate threshold voltage vs temperature normalized breakdown voltage vs temperature normalized on resistance vs temperature turn-off drain-source voltage slope turn-on current slope STE100N20 5/8
cross-over time source-drain diode forward characteristics fig. 1: switching times test circuits for resistive load fig. 2: gate charge test circuit fig. 3: test circuit for inductive load switching and diode recovery times STE100N20 6/8
dim. mm inch min. typ. max. min. typ. max. a 11.8 12.2 0.466 0.480 b 8.9 9.1 0.350 0.358 c 1.95 2.05 0.076 0.080 d 0.75 0.85 0.029 0.033 e 12.6 12.8 0.496 0.503 f 25.15 25.5 0.990 1.003 g 31.5 31.7 1.240 1.248 h 4 0.157 j 4.1 4.3 0.161 0.169 k 14.9 15.1 0.586 0.594 l 30.1 30.3 1.185 1.193 m 37.8 38.2 1.488 1.503 n 4 0.157 o 7.8 8.2 0.307 0.322 p 5.5 0.216 b e h o n j k l m f a c g d isotop mechanical data 0041565 STE100N20 7/8
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a STE100N20 8/8
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